Improvement of thin palladium and platinum silicide films on (100) Si substrated by incorporating phosphorus dopant

摘要

Effects of phosphorus dopant on thin Pd and Pt suicide films on (100) Si substrates have been studied. As for the samples formed by implanting BF2 dopant into thin Pd films deposited on Si substrates and then annealing, the thermal stability of thin Pd{sub}2Si films can be improved relative to the control samples without dopant incorporation. The degree of improvement is affected by the fluorine concentration around the silicide/Si interface and thus the BF{sub}2 implant energy. On the other hand, as for the samples formed by implanting phosphorus dopant into thin Pd films and then annealing, both the thermal stability and the silicide conductivity of thin Pd{sub}2Si films can be significantly enhanced. The large improvements in the thermal stability and the suicide conductivity are nearly independent of the phosphorus implant energy, and which are primarily due to the formation of textured Pd{sub}2Si structures. In addition, the Pt suicides formed by implanting phosphorus dopant into thin Pt films and then annealing also show considerably improved thermal stability.