Dopant diffusion studies and free carrier lifetimes during rapid thermal processing of semiconductors

摘要

Rapid thermal processing of semiconductors involves significant photonic and subsequent thermal excitation. In the past, photonic excitation during rapid thermal annealing had been speculated to lead to significant enhancement of dopant diffusion or activation. In this work we present some experimental results indicating the absence of any such enhancement at high temperatures (～1000-1050°C) which most often are employed during the metal-oxide-semiconductor device processing. The implanted dopant (boron, arsenic or phosphorus) movement in silicon during different rapid thermal annealing conditions was studied using secondary ion mass spectroscopy (SIMS) technique. To understand the effect of point defects in controlling the diffusion process, the concentrations of charged and neutral point defects were calculated as a function of carrier concentration using previously published defect-carrier relations. The dependence of free carrier concentration on lattice perturbation parameters such as impurities and temperature was formulated and used in calculating carrier lifetimes (τ) in silicon. We qualitatively analyze two competing reactions, (i) the phonon release at the defect sites and (ii) the Auger electron process due to many electron interactions, to explain the apparent absence of any enhanced dopant diffusion. In our analyses, we obtain a highest free carrier lifetime of about 442 ns in the case of low dose (1e13/cm{sup}2) implanted sample during the transient stage (700°C) of the dopant activation cycle. The corresponding smallest (～17 fs) free carrier lifetime was obtained for the high dose implanted sample (dopants already activated) at 1000°C, the steady state part of an extended anneal cycle. Based on the detailed free carrier lifetime analyses, we suggest that any enhanced dopant activation or diffusion, at the best, may occur only at very low temperatures in the samples implanted with low doses of dopant atoms.