DEVELOPING ENGINEERED PARTICULATE SYSTEMS FOR OXIDE CHEMICAL MECHANICAL POLISHING

摘要

In this study the effects of abrasive particle size on chemical mechanical polishing (CMP) slurry performance were investigated for a silica CMP process. Applied down load and slurry solids loading were varied in addition to particle size in order to evaluate the consequences of possible interactions. To study the effects of the selected variables systematically, a statistical design was applied. Material removal rate, surface roughness and maximum surface deformation were analyzed on the polished wafers as the responses. The obtained results were compared to establish the optimal particle size, solids loading and applied load regime for polishing. The outcomes of the study provided the guidelines for the preparation of engineered particulate systems for oxide CMP.