Defect centers in chemical-mechanical polished MOS oxides

摘要

Defect centers generated in vacuum-ultraviolet irradiated chemical-mechanical polished oxides have been characterized using electron paramagnetic resonance and C-V analysis. Both oxide trap E(sub (gamma)) and interface trap P(sub b0) centers were detected in unpolished and polished oxides. In addition, another interface defect center known as the P(sub b1) center was only identified in the polished oxides, suggesting that the polishing process altered the SiO(sub 2)/Si interface.