Semiconductor surface characterization by scanning probe microscopies

摘要

Besides the well-known 3-dimensional surface topography, scanning probe methods give access to a whole world of local physical information on solid surfaces. Here, we demonstrate opportunities given by scanning tunnelling spectroscopy (STS) and scanning electrical force microscopy/spectroscopy (SEFM/SEFS). In this paper, we compare the wide-spread UHV-STM/STS technique with ambient SEFM/SEFS. After short description of the methods, some applications to semiconductor surfaces are discussed. Possibly SEFS has a great potential for local electronic spectroscopy in near future.