Electrical properties of CdTe:Cl single crystals grown by sublimation technique

摘要

The current-voltage characteristics are investigated in single crystals of CdTe doped with Cl. Measured samples were n-type conductivity with resistivity ρ = (0.5 - 2.0) * 10~8 Ohmxcm, electron concentration n = (0.5 ÷ 2.0) * 10~8 cm~(-3) and electron mobility μ = 280 ÷ 300 cm~2/V * s. Experimental data are explained in the framework of theory of highly doped and highly compensated semiconductors. The mobility-lifetime product measured at room temperature is found to be in the order of (1 ÷ 5) x 10~(-4) cm~2 * V~(-1). It means that this material can be used for manufacture of X-ray detectors.