Spectral detectivity and NETD of doping-spike PtSi-p-Si and HIP GeSi-Si detectors

摘要

Platinum silicide Schottky barrier detectors (SBD) and HIP-detectors GeSi/Si-based are widely used for application in the infrared spectral range. The increase in cutoff wavelength and responsivity of PtSi-Si photodevices is possible by formation of heavily-doped thin layer near to the semiconductor surface. The cutoff wavelength of HIP-detectors Ge_xSi_(1-x)/Si-based depends on x and concentration of boron in GeSi. In this report, the threshold properties of these detectors are considered. The dependencies of spectral detectivities and NETD from cutoff wavelength are calculated for various parameters of SBD and HIP-detectors. It is shown that optimal NETD of a SBD and HIP-detectors is possible for certain cutoff wavelength and temperature of detectors and depends on storage capacity. Also opportunity of formation of heavily-doped nanolayer in SBD detectors used by short-pulse recoil implanation of boron was studied.