Doping-spike LWIR PtSi Schottky IR detector fabricated by molecular beam epitaxy

摘要

Summary form only given. It is demonstrated that by thinning the p/sup +/ layer to approximately 10 AA, the effective Schottky barrier heights can be reduced without the formation of a potential spike, and, consequently, the undesired tunneling process can be eliminated. Doping-spike PtSi detectors were fabricated on double-side polished Si