Future CMOS technology nodes bring new challenges to formation of source/drain junctions and their contacts to limit their series resistance contribution to ten percent of the device channel resistance. This requires not only extremely low junction sheet resistance values but also super abrupt doping profiles and contact resistivities that can not be obtained with the existing self-aligned silicide technology. In this paper, we present an overview of the SiGe junction technology designed to meet the demands of the future technology nodes down to 30 nm. The technology is based upon selective deposition of boron or phosphorus doped SiGe in source/drain areas isotropically etched to the desired junction depth. The technology is limited to temperatures below 800°C. Hence; it is also compatible with future high-k gate stacks, which can not withstand higher temperatures. The results indicate that the technology offers great promise in meeting the demands of the end-of- the-roadmap devices.
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