Channel depth dependent transport characteristics of a two-dimensional electron gas in an undoped GaAs/AlGaAs heterostructure

摘要

We investigated the channel depth dependence of transport characteristics of a two-dimensional electron gas (2DEG) in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a 2DEG with high mobility in a sample having a channel depth of 70 nm. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.