STUDY OF PHOTOELECTROCHEMICAL REACTIONS USING CdTe, ZnTe, AND CuIn{sub}(1-x)Ga{sub}xSe{sub}2 THIN FILMS

摘要

Thin films of wide bandgap compounds CdTe and ZnTe and CuIn{sub}(1-x)Ga{sub}xSe{sub}2 (CIGS) thin films have been studied for photoelectrochemical applications. Results showed that CdTe, ZnTe, and CuIn{sub}(1-x)Ga{sub}xSe{sub}(2-y)S{sub}y (CIGS) are promising candidates for PEC cells. CdTe is stable. CIGS is affected only slightly, and ZnTe is modified considerably in the PEC process. Surface modification and catalyst may be sufficient to protect CIGS. Elaborate protection will be necessary for ZnTe. Moderate protection may suffice for (Cd,Zn)Te.