Comparison of the RF Large Signal Performance of Common -Source, -Drain and -Gate Amplifiers using GaAs MESFETs

摘要

The RF large signal performance (-1 dB compression point and third order intercept point) of LC matched common -source, -drain and -gate amplifiers in class A operation is compared at 5 GHz. Simulations were performed with a harmonic balance simulator using our modified TOM II large signal model for 0.6 μm GaAs low power enhancement MESFETs. The model is verified by linear and nonlinear measurements.