The process development and analysis of a multilayered thin film integrated capacitor is presented. Thin film integrated capacitors show great promise as IC power supply decoupling capacitors. Their low intrinsic inductance allows them to deliver fast transient, high current to the IC. However, presently thin film capacitors have been limited in capacitance due to the limitation of substrate area in boards or packages. Generally, there is not enough area available to produce the capacitance needed so that integrated capacitors can completely replace discrete components. In this paper a multilayer thin film integrated capacitor will be discussed. The details of the multilayer process will be described, as well as process challenges and detailed results of the research. Discussion and results of two and three layer stacked integrated capacitors will be presented. As expected these devices can double or triple the capacitance density of single layer designs.
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