Thickness and Roughness Analysis on YSZ/Si(001) Epitaxial Films with Ultra Thin SiO_2 Interface by X-Ray Reflectivity

摘要

In this paper, the various thickness of YSZ epitaxial thin films were prepared by PLD. We determined the thickness and roughness of each layer of YSZ/SiO_2/Si by X-ray reflectivity (XRR, one method of the GIXA) and were conformed the results of several techniques including XPS, XRF, EDS and surface profile meter. We found that the YSZ thickness was proportional to deposition time and SiO_2 would achieve a stable thickness about 3.0 nm. The average roughness of YSZ surface and SiO_2/Si interface was about 0.2 nm and the YSZ/SiO_2 interface was vary from 0.15 nm to about 1.5 nm.