GROWTH KINETICS AND MECHANISTIC STUDIES OF GaN THIN FILMS GROWN BY OMVPE USING (N_3)_2Ga(CH_2)_3NMe_2 AS SINGLE SOURCE PRECURSOR

摘要

We report the growth kinetics and mechanistic studies of GaN thin films using the single source precursor (SSP) Bisazido(dimethylaminopropyl) gallium (BAZIGA) in a cold wall CVD reactor. The films were grown on c-plane sapphire at high growth rates and found to be epitaxial, smooth and transparent. Without using an additional nitrogen source, a FWHM of the 0002 a-GaN rocking curve of 90 arc-sec has been achieved. The film growth was studied as a function of substrate and vaporizer temperature, reactor pressure as well as carrier gas flow rates. Additionally the influence of NH_3 and H_2 was checked. The obtained films were characterized by XRD, HRXRD, XPS, RBS, SEM, AFM, and room temperature PL exhibited the correct band edge luminescence at 3.45 eV. Quadrupole MS and REMPI-TOF-MS were used to study insitu precursor fragmentation processes. Calculations at the G2-level of theory were conducted as well.