Low-Temperature OMCVD of InN Thin Films from the Novel Air-Stable Single-Molecule Precursor Azido{bis[(3-dimethylamino)propyl]}indium, (N_3)In[(CH_2)_3NMe_2]_2

摘要

We have shown that a new type of nitrogen-rich single-source precursor for low-temperature OMCVD of InN can be derived by intramolecular base adduct stabilization. InN growth is possible in the absence of ammonia. The handling of this novel precursor to obtain crystalline films is much easier and probably safer than that of the binary systems InR_3/ NH_3. It may, for example, be an interesting alternative precursor for the formation of InGaN alloys by CBE or OMCVD.