METALORGANIC CHEMICAL VAPOR DEPOSITION OF NICKEL FILMS: INVESTIGATION OF A NEW PRECURSOR, Ni(tmen)(μ-tfa)(tfa)_2(μ-H_2O)

摘要

This paper presents results on the synthesis of [Ni(tmen)(μ-tfa)(tfa)]_2(μ-H_2O) and its evaluation as a potential metalorganic precursor for the chemical vapor deposition of Ni films. TG and DSC showed that this compound can be heated at least up to 473K without modification. Films deposited between 498K and 623K have a granular structure whose grain size is a function of the deposition conditions. They are crystallized and are composed of mixtures of Ni and the metastable carbide Ni_3C. The Ni_3C/(Ni_3C+Ni) ratio was determined with XRD after correction of the JCPDS card for Ni_3C. It was found to decrease with increasing temperature up to 573K. The same holds for the overall carbon content and the ratio of (C-Ni)/[(C-C)+(C-Ni)] bonds, determined by EPMA and XPS, respectively. Reflectance measurements confirm these trends.