METHOD FOR PRODUCING NICKEL THIN FILM ON Si SUBSTRATE BY CHEMICAL VAPOR DEPOSITION METHOD, AND METHOD FOR PRODUCING Ni SILICIDE THIN FILM ON Si SUBSTRATE

摘要

A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250°C as film formation conditions (In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. R 1 to R 5 which are substituent groups of the cyclopentadienyl group represent C n H 2n+1 and n represents an integer of 0 to 6).