CVD OF SiC FROM CH_3SiCl_3 IN A HOT-WALL-REACTOR SYSTEM: TRANSPORT PHENOMENA AND KINETIC ASPECTS

摘要

Silicon carbide (SiC) offers a lot of interesting properties and is used in a wide range of applications. The present study of the CVD process of SiC from meth-yltrichlorosilane/hydrogen (MTS/H_2) is addressed to the determination of the kinetic parameters, namely reaction order n, apparent activation energy EA and preexponential factor ko. A simple power rate law according to the global decomposition reaction is chosen as model equation. Especially the dependence of the kinetic parameters on the total pressure is focused in a wide pressure range (5-100 kPa), under respect to the fluid dynamics in the hot wall reactor arrangement used. A detailed 3D model has been used for the analysis of the transport mechanisms and their effect on the growth rate.