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Characterization Study of an Aqueous Developable Photosensitive Polyimide on 300 mm Wafers

机译:300毫米晶圆上含水可显良光敏聚酰亚胺的表征研究

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The advent of 300 mm -wafer processing for semiconductor manufacturing has had a great impact on the development of photolithographic materials, equipment and associated processes. At the same time advanced packaging techniques for these semiconductor devices are making strides for smaller, faster and lower cost parts with improved reliability. Photosensitive polyimides are used for passivation stress buffer relief and soft error protection on almost all memory devices such as DRAM as well as final passivation layers for subsequent interconnect bumping operations on most of today's advanced microprocessors. For processing simplicity and total cost of ownership, it is desirable to use an aqueous developable polyimide to maintain compatibility with standard photoresist processes. This study will investigate the feasibility of processing photosensitive polyimides on 300 mm wafers. The performance of a commercially available, positive acting, aqueous developable polyimide is examined at a thickness appropriate for logic devices. A broadband stepper is utilized since polyimides are highly aromatic polymers that strongly absorb UV light below 350 nm. This stepper exposes photosensitive films using mercury vapor spectrum output from 390 nm to 450 nm (g and h-line) and allows rapid exposure of both broadband as well as narrow spectral sensitive films. The system has been optimized for thick photoresists and polyimides and uses a combination of low numerical aperture with maximum wafer level intensity to achieve well formed images in thick films. Process capability for 300 mm wafers is determined by analyzing polyimide film thickness uniformity and critical dimension (CD) control across the wafer. Basic photoresist characterization techniques such as cross sectional SEM analysis, process linearity and process windows are also used to establish lithographic capabilities. The trade-offs for various process capability windows are reviewed to determine the optimum process conditions for different polyimide applications.
机译:对于半导体制造的300 mm -wafer加工的出现对光刻材料,设备和相关工艺的发展产生了很大的影响。同时,这些半导体器件的先进包装技术正在进行较小,更快,更低的成本部件,具有改善的可靠性。光敏聚酰亚胺用于钝化应力缓冲救济和软错误保护几乎所有的存储设备,例如DRAM以及最终的钝化层为随后互连大多数当今先进的微处理器的撞击操作。为了加工简单性和总拥有成本,希望使用可显良的聚酰亚胺来维持与标准光致抗蚀剂过程的相容性。该研究将研究加工在300mm晶片上的光敏聚酰亚胺的可行性。以适合于逻辑器件的厚度检查市售的阳性作用,水性可显良聚酰亚胺的性能。利用宽带步进器,因为聚酰亚胺是高度芳族聚合物,其强烈地吸收低于350nm的UV光。该步进器使用从390nm至450nm(g和H线)的汞蒸汽谱暴露光敏膜,并允许宽带以及窄谱敏感膜的快速暴露。该系统已经针对厚的光致抗蚀剂和聚酰亚胺进行了优化,并使用低数值孔径的组合,具有最大晶片水平强度,以在厚膜中实现良好的形成图像。通过分析晶片上的聚酰亚胺膜厚度均匀性和临界尺寸(CD)控制来确定300mm晶片的工艺能力。基本的光刻胶表征技术,如横截面SEM分析,过程线性度和过程窗口也用于建立光刻功能。综述各种流程能力窗口的权衡以确定不同的聚酰亚胺应用的最佳过程条件。

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