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Enhancement of Solvent Resistance of Polyimide Electrospun Mat via the UV-Assisted Electrospinning and Photosensitive Varnish

机译:通过紫外线辅助静电纺丝和光敏清漆增强聚酰亚胺电纺垫的耐溶剂性

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摘要

A new methodology for enhancing the solvent resistance of electrospun polyimide (PI) ultrafine fibrous mat (UFM) was investigated in the current work. For this purpose, a negative intrinsically photosensitive polyimide (PSPI) resin was prepared by the one-step high- temperature polycondensation procedure from 3,3’,4,4’-benzophenonetetracarboxylic dianhydride (BTDA) and α,α-bis(4-amino-3,5-dimethylphenyl)phenylmethane (PTMDA). The PI varnish, by dissolving the derived PI (BTDA-PTMDA) resin in -dimethylacetamide (DMAc) at a solid of 20 wt %, was used as the starting material for the standard electrospinning (ES) and ultraviolet-assisted ES (UVAES) fabrications, respectively. The 365 nm wavelength of the high-pressure mercury lamp ultraviolet (UV) irradiation induced the photocrosslinking reaction in the PSPI mat. Solubility tests indicated that the PI UFM fabricated by standard ES procedure showed poor DMAc resistance, while the one by UVAES (PI-UV) exhibited excellent resistance to DMAc.
机译:在当前工作中,研究了一种提高电纺聚酰亚胺(PI)超细纤维毡(UFM)的耐溶剂性的新方法。为此,通过一步高温高温缩聚工艺,由3,3',4,4'-二苯甲酮四羧酸二酐(BTDA)和α,α-双(4-)制备了负本征光敏聚酰亚胺(PSPI)树脂。氨基-3,5-二甲基苯基)苯基甲烷(PTMDA)。通过将衍生的PI(BTDA-PTMDA)树脂以20 wt%的固体溶解在-二甲基乙酰胺(DMAc)中,PI漆被用作标准静电纺丝(ES)和紫外线辅助ES(UVAES)的原料分别。高压汞灯紫外线(UV)的365 nm波长诱导了PSPI垫中的光交联反应。溶解度测试表明,通过标准ES程序制造的PI UFM表现出较差的DMAc耐受性,而通过UVAES(PI-UV)制备的PI UFM表现出了优异的DMAc耐受性。

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