Chemical-mechanical polishing (CMP) of various low-k dielectrics

摘要

In this study, we have evaluated the applicability of different slurry chemistries developed in our laboratory for the direct Chemical Mechanical Polishing of different types of low-k ILD films such as FLARE, a poly (aarylene ether) based material, HOSP, a hybrid organic-inoroganic material and nanoglass, a nano-porous silica, develoed at Honeywell. The slurries with modified chemistries have been prepared using commercially available abrasives such as silica, alumina or zirconia powder. The effects of direct CMP of low-k dielectric films on delamination and surface chemistriy change were evaluated. The work also evaluates the applicability of the modified slurries for the selective removal of the tantalum barrier films on FLARE. Films. A better post-CMP cleaning efficiency of organic polymer films (such as FLARE) has been achieved by improving the hydrophilicity of polyerm surface with surface modifying agents. The applicability of the results in developing planarization of copper damascene interconnects and in subtractive aluminum are discussed.