Atomically flat surfaces of compound semiconductors by chemical-mechanical polishing

摘要

This paper highlights the chemical-mechanical polishing and planarization (CMP) schemes for obtaining atomically flat surfaces of compound semiconductors with a wide variety of physical and structural properties. Using specific slurries and optimized pads, surfaces with Root Mean Square (RMS) roughness less than 0.2 nm in 10 x10 #mu# m~2 areas have been demonstrated; this roughness is comparable to device quality silicon wafer micro-roungness. The effects of slurry preparation cycle on the slurry properties and CMP results are discussed.