Graded-barrier graded-channel InP pseudomorphic power HEMT with 40 power added efficiency and 200 mW output power at 60 GHz

摘要

We present state-of-the-art power and PAE results of InGaAs/InAlAs/InP HEMTs with optimized graded channel and graded Schottky barrier layers which demonstrate, for the first time, that InP-based HEMTs have a considerably better power/PAEcombination than GaAs-based HEMTs at V-band. The 0.15μm gate length, eight gate finger, 500μm wide InP HEMTs were measured in fixture under continuous wave (CW) conditions and showed 23 dBm (200 mW) output power and 40% PAE at 60 GHz with an input power of 17 dBm, a drain bias of 3 V, and a drain current of 125 mA. Figure 1 shows the measured output power, power gain, and PAE versus input power at 60 GHz for the fixtured and tuned device. These results represent the best reported V-band power/PAEperformance to date, and a comparison of these results with previously reported results [1-5] for both InP- and GaAs-based HEMTs is shown in Figure 2. Our state-of-the-art results are attributed to the use of an optimized heterostructure incorporatingpseudomorphic graded channel and graded Schottky barrier layers, and the use of compact 15μm×25μm dry etched through-substrate vias (substrate thickness of 50μm).