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Effects of Gate Oxide Deposition Methods on Excimer Laser Crystallized poly-Si Thin Film Transistors

机译：栅极氧化物沉积方法对准分子激光结晶多Si薄膜晶体管的影响

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Various kinds of silicondioxides (SiO_2) were systematically investigated by current-voltage and poly-Si TFT-characteristics. Without hydrogenation, oxide by TEOS-PECVD has the best TFT-characteristics. After plasma hydrogenation LPCVD-oxide has the best TFT-characteristics, with a mobility of 150 cm~2/Vs and an off-current of 0.4 pA.

机译：通过电流 - 电压和多Si TFT-特性系统地研究各种硅氧化物（SiO_2）。无氢化，TEOS-PECVD的氧化物具有最佳的TFT特性。血浆氢化LPCVD-氧化物具有最佳的TFT-特性，迁移率为150cm〜2 / Vs和0.4Pa的截止流。

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《International Display Research Conference》|1999年||共4页
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Ir. Barry van Dijk; Jurgen Bertens; Ryoichi Ishihara;
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中图分类 O438-532;
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4. Effects of Gate Oxide Deposition Methods on Excimer Laser Crystallized poly-Si Thin Film Transistors [C] . Ir. Barry van Dijk, Jurgen Bertens, Ryoichi Ishihara International Display Research Conference . 1999

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Effects of Gate Oxide Deposition Methods on Excimer Laser Crystallized poly-Si Thin Film Transistors

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