Preparation and Characterization of D.C. Reactive Magnetron Sputtered ITO Films for Si-based TFT-AMLCD Application

摘要

The electrical□optical and structural properties of ITO films prepared by reactive d.c. magnetron sputtering are investigated. The microstructure properties of ITO films dependent on various oxygen partial pressures are also reported using SEM and XRD methods. We obtained ITO films with appropriate sheet resistance□150□200Ω/□□ and transmittance□above 80%□which are satisfied for ALMCD application at low substrate temperature□below 200□□ and low sputtering power□175W□which meet the requirements for Si-based TFT devices preparation technology.