Threshold voltage shifts of sub-micron poly-Si thin-film transistors by boron doping

摘要

We describe boron doping effects in n- and p-channel poly-Si TFTs with a maximum process temperature of 450 °C as a function of the geometry. Boron doping effects are shown in the threshold voltage shifts and mobilities of n-channel TFTs, more significant than those of p-channel TFTs. Some structure in p-channel TFT threshold variation with drain bias is observed, which relate to defects in the grain boundaries.