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Kink Effect Phenomenon in I-V Characteristic of Multiple-Gated AlGaAs/InGaAs HEMTs Device

机译：多门控Algaas / Ingaas Hemts装置的I-V特征扭结现象

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The electrical measurement to obtain output current characteristic of 0.2 mum AlGaAs / InGaAs HEMTs device has been performed within specific drain and gate bias voltages. The samples which consist a few layouts were designed based on different number of

机译：在特定的漏极和栅极偏置电压下执行了在特定的漏极和栅极偏置电压下进行0.2毫米ALGAAS / INGAAS HEMTS装置的输出电流特性的电测量。根据不同数量的方式设计了一些布局的样本

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来源
《Asia Pacific Microwave Conference》|2007年||共4页
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作者
Osman M.N.; Awang Z.; Rahim A.I.A.; Yaakob S.; Yahya M.R.; Mat A.F.A.;
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中图分类 TN015-53;
关键词
aluminium compounds; electron density; gallium arsenide; high electron mobility transistors; indium compounds; AlGaAs; InGaAs; electron density; kink effect phenomenon; multiple-gated HEMT device; Current-voltage characteristic; Kink effect; Multiple-gated HEMT;

机译：铝化合物;电子密度;砷化镓;高电子迁移率晶体管;铟化合物;Algaas;IngaAs;电子密度;扭结效应现象;多门控HEMT装置;电流 - 电压特性;扭结螺丝;扭结的旋转;扭结血清;

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专利

1. Determination of device structure from GaAs/AlGaAs HEMT DC I-V characteristic curves [J] . Mahon S.J., Skellern D.J. IEEE Transactions on Electron Devices . 1992,第5期

机译：从GaAs / AlGaAs HEMT DC I-V特性曲线确定器件结构
2. Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching [J] . Jin-Hee Lee, Hyung-Sup Yoon, Jae Yeob Shim, Thin Solid Films . 2003,第1a2期

机译：通过电感耦合等离子体刻蚀制备的AlGaAs / InGaAs HEMT的器件特性
3. On the soft breakdown phenomenon in AlGaAs/InGaAs HEMT: An experimental study down to cryogenic temperature [J] . A. Caddemi, G. Crupi, N. Donato Solid-State Electronics . 2005,第6期

机译：AlGaAs / InGaAs HEMT中的软击穿现象：低温实验研究
4. Kink Effect Phenomenon in I-V Characteristic of Multiple-Gated AlGaAs/InGaAs HEMTs Device [C] . Osman M.N., Awang Z., Rahim A.I.A., Asia Pacific Microwave Conference . 2007

机译：多门控Algaas / Ingaas Hemts装置的I-V特征扭结现象
5. Material, physics, device physics, and technology of high-power pseudomorphic AlGaAs/InGaAs high electron mobility transistors. [D] . Chou, Yeong-Chang. 1997

机译：高功率拟晶AlGaAs / InGaAs高电子迁移率晶体管的材料，物理学，器件物理学和技术。
6. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

机译：使用液相沉积的TiO2作为栅介质的AlGaAs / InGaAs PHEMT的亚阈值特性和闪烁噪声降低
7. LF Excess Noise of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs [O] . N. Saysset, C. Maneux, N. Labat, 1995

机译：LF Algaas / GaAs和Algaas / Ingaas / Gaas Hemts的过量噪声

Kink Effect Phenomenon in I-V Characteristic of Multiple-Gated AlGaAs/InGaAs HEMTs Device

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