Peculiarities of Raman Spectra and Real Structure of Ge_(1-x)Si_x Solid Solution

摘要

The amplitude, shape and position of the Raman spectra lines have been investigated versus composition of Ge_(1-x)Si_x solid solutions with a low Si content (x<0.3) to gain an insight into the Si atoms arrangement in the Ge lattice and the effects of fine interaction of Ge and Si atoms in these materials. The data yielded by a through analysis of the behavior of the spectral lines corresponding to the vibrations of Ge-Ge and Ge-Si atomic bonds revealed some peculiar features. We discuss here the absence of high-frequency shift and broadening of the Ge-Ge local vibrations in ur Ge_(1-x)Si_x solid solution samples. We have also studied the splitting effect of the Ge-Si line into two branches and suggested some explanation of this result.