首页> 外文期刊>Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology >Phase transition, Raman spectra. Infrared spectra, band gap and microwave dielectric properties of low temperature firing (Na_(0.5x)Bi_(1-0.5x))(Mo_xV_(1-x))O4 solid solution ceramics with scheelite structures
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Phase transition, Raman spectra. Infrared spectra, band gap and microwave dielectric properties of low temperature firing (Na_(0.5x)Bi_(1-0.5x))(Mo_xV_(1-x))O4 solid solution ceramics with scheelite structures

机译:相变,拉曼光谱。白钨矿结构低温烧成(Na_(0.5x)Bi_(1-0.5x))(Mo_xV_(1-x))O4固溶陶瓷的红外光谱,能带隙和微波介电性能

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A scheelite based structure that could host the solid solution (Na_(0.5x)Bi_(1-0.5x))(Mo_xV_(1-x))O4 (0.0 ≤ x ≤ 1.0) was prepared via the solid state reaction method. All the compositions can be sintered well below a temperature of 800 °C. A structural phase transition occurs from the monoclinic scheelite structure to a tetragonal scheelite structure at x = 0.10 at room temperature. This structural transition is related to a displacive ferroelastic-paraelastic phase transition. This phase transition was also confirmed by in situ high temperature XRD and Raman studies, and a room temperature infrared spectra study. The compositions near the phase boundary possessed high dielectric permittivities (>70), and large Qf values (>80 000 GHz) with variable temperature coefficients of frequency and capacitance. For example, a temperature stable dielectric made as a composite with compositions of x = 0.05 and x = 0.10 was designed and co-sintered at 720 °C for 2 h to produce a dielectric with a permittivity of ~77.3, a Qf value between 8 000 GHz-10 000 GHz, and a temperature coefficient of <±20 ppm/°C at 3.8 GHz over a temperature range of 25-110 °C. This material is a candidate for dielectric resonators and low temperature co-fired ceramics technologies. Near the phase boundary at x = 0.10 in the monoclinic phase region, the samples show strong absorption in the visible light region and we determine a band gap energy of about 2.1 eV, which means that it might also be useful as a visible light irradiation photocatalyst.
机译:通过固态反应方法制备了可以容纳固溶体(Na_(0.5x)Bi_(1-0.5x))(Mo_xV_(1-x))O4(0.0≤x≤1.0)的基于白钨矿的结构。所有组合物都可以在低于800°C的温度下充分烧结。在室温下,在x = 0.10时,结构发生从单斜白钨矿结构到四方白钨矿结构的相变。这种结构转变与位移性铁弹性-超弹性相变有关。这种相变还通过原位高温XRD和拉曼研究以及室温红外光谱研究得到证实。相边界附近的成分具有较高的介电常数(> 70)和较大的Qf值(> 80 000 GHz),且频率和电容的温度系数可变。例如,设计了由x = 0.05和x = 0.10组成的复合材料制成的温度稳定电介质,并在720°C下共烧结2 h,以生产介电常数约为〜77.3,Qf值为8的电介质。 000 GHz-10 000 GHz,并且在25-110°C的温度范围内,在3.8 GHz时的温度系数<±20 ppm /°C。这种材料是介电共振器和低温共烧陶瓷技术的候选材料。在单斜晶相区域中x = 0.10的相界附近,样品在可见光区域显示出较强的吸收,并且我们确定的带隙能量约为2.1 eV,这意味着它也可用作可见光辐照光催化剂。

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