Oxygen Precipitation in silicon Thin Layers int eh PResence of Carbon

摘要

By using the oxyge and carbon ion implantation into silicon wafers grown by flating zone technique as a tool of creation the model material the precipitation process in the presence of carbon is investigated. The analysis of carbon influence on the precipitation in silicon is reported. It is shown that it is possible to distinguish different kind of defects that formed on the dependence of presence or absence of carbon. The analysis of the implantation conditions and the following annealing conditions on the type and density of created defects is carried. It is shown that oxygen precipitation can appear to be in the presence of carbon at lower residual oxygen concentration than in the absence of carbon. This differences in residual oxygen concentration can reach two orders of magnitude. In the presence of carbon is possible to observe oxygen precipitation even in the silicon samples grown by flating zone technique. Simultaneously it is shown the advantage of VK-etching solution that allow one to reveal not only the final precipitates but the precipitation seed centers.