Material properties of hot-wire deposited silicon TFTs

摘要

Thin-film transistors (TFTs) which incorporate an amorphous-silicon layer deposited with hot-wire chemical vapor deposition, are highly stable upon prologned gate-voltage stress as compared to conventional glow-discharge TFTs. We correlate this performance with the material properties. Both amorphous films and heterogeneus films, with cone-shaped crystallites in an amorphous matrix, show excellent electronic performance in a TFT structure. The heterogeneous films have a remarikably low hydrogen content of at.