Hydrogenation of amorphous silicon thin film transistors

摘要

Two subjects on the plamsa hydrogenation of a-Si:H thin film transistor (TFT) have been discussed. Chemical evidence of the formation of dangling bonds on the hydrogen exposed silicon nitride surface has been obtained. The result can explain the TFT deterioration process. Repairing of the reactive ion etch damaged inverted, tri-layer a-SI:H TFT using palsma hydrogen has been studied. A new type of damage, i.e., positive charge trapping caused negative threshold voltage shift, has been observed which can be repaired with thermal annealing. Therefore, the influence of plasma hydrogen to TFT is process-and structure-dependent.