Recently, oxide semiconductors such as zinc oxide (ZnO), indium gallium zinc oxide (IGZO) and zinc tin oxide (ZTO) have attracted considerable attention for flat-panel displays (FPDs) as active channel materials for TFTs. Amorphous oxide-based thin film transistors (TFT) attract considerable attention for the driving elements of active matrix display. It is reported that oxide TFTs exhibits high mobility, visible light transparency, good uniformity and excellent environment stability (1-3).
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