Amorphous oxide semiconductor memory using high-k charge trap layer

摘要

Recently, the demand for high-density non-volatile memories is rapidly increasing, and, thus, three dimensional memories are attracting a great deal of attention in these terms as an ultra-dense but low-cost per bit memory (1,2). The vertical integration of memory cells is considered as the ultimate structure in semiconductor memory devices. However, in conventional devices this is hindered by either the low performance of amorphous Si or broad distribution of threshold voltage (V_(th)) of poly-Si channel materials (2). Oxide semiconductors, such as amorphous ZnSnO_x and InGaZnO_x are attractive candidates as the channel material in vertically or laterally stacked three dimensional flash memory.