High-k Hf_xGd_yO_z Charge Trapping Layer in Silicon-Oxide-Nitride-Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method

摘要

In this paper, we propose a novel non-volatile memory (NVM) with a Hf_xGd_yO_z trapping layer prepared by RF dual sputtering for the first time. A higher programming/erasing (P/E) speed and a longer data retention time can be obtained owing to improved trapping ability of HfGdO. Furthermore, in situ RF dual sputtering of Hf_xGd_yO_z MHHHS (metal/HfO_2/Hf_xGd_yO_z/Si) is a promising technology for future NVM because of its simplicity and its material compatibility in the semiconductor industry.