Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method

摘要

In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl$-3$/-AsCl$-3$/-H$-2$/ are discussed. The model describing the mechanism of GaAs$-x$/-P$- 1$MIN@x$//GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.