METHOD OF PRODUCING A VAPOUR GROWTH LAYER OF GAAS1-XPX

摘要

1308790 Light-emitting GaAs 1-n P n diode HITACHI Ltd 27 Oct 1970 [27 Oct 1969] 51063/70 Heading H1K [Also in Division C1] A light-emitting diode comprises an epitaxial growth layer of GaAs 1-n P n where (0n1) or a need of Ga or Si, GaAs or GaAsP and having P-and N-type regions comprising impurities, e.g. Zn and Se respectively. The diode emits red light at 6540 Š when supplied with a forward current density of 4 A/cm.SP2/SP.