Chemical mechanical polishing (CMP) has been widely accepted for the planarization of multi-layer structures in semiconductor manufacturing. The results of CMP can be optimized by several process parameters such as equipment, pad, carrier film and slurry. However, there have been serious problems in repeatability of results. This paper describes the development concepts and the performance of a semi-rigid abrasive pad intending to minimize uncontrollable process parameters during CMP. It is also expected to reduce dishing effects. The developed pad was applied to ILD CMP and the result was compared with that of conventional pad in terms of material removal rate, within wafer non-uniformity and surface damage.
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