【24h】

Overlay errors in optical lithography

机译:光学光刻中的覆盖错误

获取原文

摘要

The overlay errors in IC manufacturing must be less than one-third of the minimum linewidth for higher density devices. It is a very important and difficult problem to keep high overlay accuracy. In this paper, a simulation model was made to analyze the overlay distribution geometry and the statistical characteristics. It explores the effects of various parameters of intrafield sources and interfield sources on the overlay. The emphasis is placed on analysis of the physical significance of various parameters.
机译:IC制造中的覆盖错误必须小于较高密度设备的最小线宽的三分之一。保持高叠加精度是一个非常重要和难以的问题。本文采用了仿真模型来分析覆盖分布几何和统计特征。它探讨了Intriafield源和Interfield源在覆盖层上的各种参数的影响。重点是分析各种参数的物理意义。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号