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Observation of polarization and two dimensional electron gas in AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy

机译:使用扫描非线性介电显微镜观察Algan / GaN异质结构中的偏振和二维电子气体

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We measured AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy (SNDM) [1], which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which is sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Two dimensional electron gas (2DEG) was observed at the AlGaN/GaN interface. This results show that SNDM is useful method for evaluation of 2DEG profile and polarization profile in AlGaN/GaN heterostructure.
机译:我们使用扫描非线性介电显微镜(SNDM)[1]测量AlGaN / GaN异质结构,其可以测量AlGaN / GaN异质结构中的载体和偏振曲线。结果,清楚地区分了作为自发极化和压电偏振之和的GaN自发极化和AlGaN偏振。在AlGaN / GaN接口处观察到二维电子气体(2deg)。该结果表明,SNDM是在AlGaN / GaN异质结构中评估2deg曲线和偏振曲线的有用方法。

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