Reciprocal lattice mapping of pressure - annealed czochralski grown silicon

摘要

An effect of annealing of Czochralski grown silicon at 720 - 1230K under enhanced (up to 1.5GPa) pressure was investigated by reciprocal lattice mapping, diffuse X-ray Huang scattering and related measurements. Increased pressure during annealing resulted in massive oxygen precipitation. Stress-induced increase (as compared to effect of annealing at 10~5 Pa) of concentration of oxygen - related defects and diminishing of their sizes were detected.