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X-Ray Reciprocal Space Mapping of Coincided As-Clusters/GaAs and delta- InAs/GaAs Superlattices Grown at Low Temperature.

机译：低温生长的同向砷簇/ Gaas和δ-Inas / Gaas超晶格的X射线倒易空间映射。

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X ray reciprocal space mapping was employed to assess the crystalline quality of the delta-InAs/GaAs superlattices grown at low temperatures and structural transformations related to formation of As-cluster/GaAs superlattices upon post-growth anneal.

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作者
Faleev, N. N.; Chaldyshev, V. V.; Preobrazhenskii, V. V.; Putyato, M. A.;
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年度 1999
页码 1-5
总页数 5
原文格式 PDF
正文语种 eng
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关键词
Superlattices; Annealing; Low temperature; Structural properties; Gallium arsenides; Crystals; Russia; Mapping(Transformations); Transformations; Indium arsenides; Component report; Foreign reports; X ray reciprocal mapping;

机译：超晶格;退火;低温;结构特性;砷化镓;晶体;俄罗斯;映射（转换）;转换;砷化铟;成分报告;外国报告; X射线倒数映射;
入库时间 2022-08-29 11:08:46

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专利

1. Determination of Ga interdiffusion in InAs : GaAs(001) islands by x-ray reciprocal space mapping [J] . Malachias A., Rodrigues WN., Moreira MVB., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2003,第10ASpeca期

机译：X射线倒数空间映射法测定InAs：GaAs（001）岛中Ga的互扩散。
2. GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device [J] . Arai Masakazu, Takahashi Kakeru, Yamagata Yuya, Japanese journal of applied physics . 2018,第8s2期

机译：金属有机气相外延法生长InAs衬底上砷掺入GaAsSb层厚度对InAs / GaAsSb超晶格的影响
3. Misfit dislocation anisotropies in the lnGaAs/GaAs(001) interface measured using X-ray topography and reciprocal space mapping [J] . Hidetoshi Suzuki, Takuya Matsushita, Masahiro Katayama, Japanese journal of applied physics . 2014,第1期

机译：使用X射线形貌和对等空间映射测量的lnGaAs / GaAs（001）接口中的错配位错各向异性
4. Reciprocal space X-ray mapping and transmission electron microscopic studies of coincided δ-InAs and As-cluster superlattices in GaAs films grown by molecular-beam epitaxy at low temperature [C] . V. V. Chaldyshev, N. A. Bert, N. N. Faleev, Symposium on self-organized processes in semiconductor alloys . 2000

机译：在低温下通过分子束外延生长的GaAs膜中的一致δ-ina和簇超晶格的倒数空间X射线测绘和透射电子显微镜研究
5. Growth of InAs/GaAs short-period strained-layer superlattices by molecular beam epitaxy. [D] . Lewis, Jonathan Henry. 1997

机译：InAs / GaAs短周期应变层超晶格的分子束外延生长。
6. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy [O] . D. Benyahia, Ł. Kubiszyn, K. Michalczewski, 2018

机译：GaAs衬底上分子束外延生长的中波和长波InAs / GaSb超晶格的电学性质
7. Molecular beam epitaxy of modulation doped N-AlGaAs/(InAs/GaAs)/GaAs superlattices at thikness of InAs layers below and near threshold of nucleation quantum dots for high frequency applications [O] . Mokerov V.G., Fedorov Yu.V., Hook A.V., 2000

机译：在高频应用中，在成核量子点阈值以下和附近的InAs层厚度下，调制掺杂N-AlGaAs /（InAs / GaAs）/ GaAs超晶格的分子束外延

X-Ray Reciprocal Space Mapping of Coincided As-Clusters/GaAs and delta- InAs/GaAs Superlattices Grown at Low Temperature.

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