SILICIDE AS DOPANT SOURCE: ULTRASHALLOW n AND p JUNCTIONS IN SILICON

摘要

Ultrashallow junctions (< 250 A) are obtained in silicon by implanting dopants (≥5 keV) into single crystal, 550 A thick CoSi_2 films and outdiffusing by rapid thermal anneals. The dopant profiles are highly retrograde and do not show enhanced diffusion. The low resistivity of the film is maintained after implant, outdiffusion, and anneal.