SILICON CARDIDE SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SAME, JUNCTION BETWEEN TRANSITION METAL SILICIDE AND METAL FILM THEREIN, AND METHOD OF MANUFACTURING JUNCTION BETWEEN TRANSITION METAL SILICIDE AND METAL FILM THEREIN

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which does not cause peeling of an upper conductor film that coats a silicide electrode, to provide a method of manufacturing the silicon carbide semiconductor device, to provide a junction between a transition metal silicide and a metal film in the silicon carbide semiconductor device, and to provide a method of manufacturing the junction between the transition metal silicide and the metal film in the silicon carbide semiconductor device.;SOLUTION: The low-carbon silicide electrode is formed by coating an n-type SiC substrate 1 with a contact parent material such as Ni, forming a silicide electrode 52 by making the contact parent material and the n-type SiC substrate 1 react in solid phase, drawing off at least a part of the carbon formed inside the silicide electrode 52 to the outside of the electrode, and removing it. Accordingly, an upper conductor film 3 of the silicon carbide semiconductor device is coated on a low-carbon silicide electrode 52 in which the carbon content is lower than the silicon content in comparing the mol numbers.;COPYRIGHT: (C)2007,JPO&INPIT