DLTS investigation of impurity or defect agglomerates in silicon on the example of oxygen precipitates

摘要

DLTS technique can be applied to the investigation of local inhomogeneities in the distribution of defects or impurities with deep levels. This method has been used for study of oxygen precipitate (OP) formation at 600-900 deg C. OP formation proceeds through the oxygen rich local areas creation in silicon matrix. The accumulation of oxygen atoms in these areas leads with annealing time to the phase transformation.