Influence of the arsenic molecular form on the stoichiometry of the growth surface during MBE of GaAs

机译：砷分子形式对GaAs MBE生长表面化学计量的影响

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IN this paper we quantitatively estimate the influence of the arenic molecular form on the GaAs surface stoichiometry. For this aim the phase diagrams for As_2 and As_4 fluxes of the GaAS (001) surface in static (withoug growth) and dynamic conditions are compared. Within experimental error (15

机译：在本文中，我们定量地估计了丸剂分子形式对GaAs表面化学计量的影响。为此，比较AS_2和GaAs（001）表面的静态（001）表面的相位图进行比较，比较静态（有沟生长）和动态条件。在实验错误中（15

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《International symposium on compound semiconductors》|1997年||共4页
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V.V.Preobrazhensikii; R.I.Nizamov; M.A.Putyato; B.R.Putyato; B.R.Semyagin; D.I.Lubyshev; O. P.Chelyakov; Institute of Physics;
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4. Influence of the arsenic molecular form on the stoichiometry of the growth surface during MBE of GaAs [C] . V.V.Preobrazhensikii, R.I.Nizamov, M.A.Putyato, International symposium on compound semiconductors . 1997

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Influence of the arsenic molecular form on the stoichiometry of the growth surface during MBE of GaAs

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