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Photoluminescence energy transitions in GaAs-Ga_(1-x)Al_xAs double quantum wells: Electric and magnetic fields and hydrostatic pressure effects

机译:GaAs-Ga_(1-x)AL_XAS双量子阱中的光致发光能量转变:电磁场和静水压力效应

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The photoluminescence energy transitions in GaAs-Ga_(1-x)Al_xAs coupled double quantum wells are presented by considering the simultaneous effects of applied electric and magnetic fields and hydrostatic pressure. Calculations have been made in the framework of the effective mass and parabolic band approximations and using a variational procedure. The electric field is taken to be oriented along the growth direction of the heterostructure whereas for the magnetic field both in-plane and in-growth directions have been considered. The results show that the hydrostatic pressure and the applied electric field are two useful tools to tune the direct and indirect exciton transitions in such heterostructures. Our results are in good agreement with previous experimental findings in double quantum wells under applied electric field and hydrostatic pressure.
机译:通过考虑施加的电场和抗液体和静压压力的同时效果,给出了GaAs-Ga_(1-x)AL_XAS耦合双量子孔中的光致发光能量转变。已经在有效质量和抛物线带近似的框架和使用变分过程进行了计算。将电场沿着异质结构的生长方向取向,而对于磁场已经考虑在面内和生长方向。结果表明,静压压力和施加的电场是两个有用的工具,可以调整这种异质结构中的直接和间接的激子转变。我们的结果与应用电场的双量子孔中以前的实验结果吻合良好。

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