Structural study of low-temperature grown superlattices of GaAs with delta-layers of Sb and P

摘要

The structure of low-temperature grown superlattices of GaAs with delta-layers of Sb and P was studied by analysis of the X-ray diffraction curves, which was accompanied by optical absorption measurements and transmission electron microscopy. The obtained structural parameters included the periods of structure, thicknesses of the Sb and P 5-layers, amount of excess As in the as-grown state. Variations of these parameters were documented when samples were annealed and the excess As transformed from antisite defects into As nanoinclusions.