We recently reported pentacene-based organic thin film transistors (TFTs) with field-effect mobility and on/off current ratio comparable to hydrogenated amorphous silicon devices. However, these devices had large threshold voltage (typically +20 V; that is, the devices are on at zero gate bias) and large subthreshold slope (typically 5 V/decade), which makes application in low-voltage circuits problematic. We have now fabricated pentacene-based TFTs with field-effect mobility as large as 1.5 cm/sup 2//V-s, low threshold voltage, and subthreshold slope as low as 1.6 V/decade.
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机译:我们最近报道了与氢化非晶硅装置相当的场效应迁移率和开/关电流比的基于五烯类有机薄膜晶体管(TFT)。然而,这些器件具有大的阈值电压(通常为<+20V;即,器件在零栅极偏置处)和大的亚阈值斜率(通常<5V /十年),这使得在低压电路中的应用问题。我们现在已经制造了基于五章的TFT,具有大约1.5cm / sup 2 // V-s,低阈值电压和亚阈值斜率,低至1.6 v /十年的阈值斜率。
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